DocumentCode
1918130
Title
Variability, margins, and unpredictability: Dealing with uncertainty in SRAM design
Author
Aitken, Robert C.
Author_Institution
McGill Univ., Montreal, QC
fYear
2007
fDate
3-5 Dec. 2007
Firstpage
15
Lastpage
15
Abstract
As process technology continues to advance, SRAM design is becoming increasingly critical. Not only does memory occupy a large portion of the design, but memory structures are increasingly susceptible to yield and variability issues than. Classical design validation and margining methods must be extended to cope with new challenges, including low power operation, accurate modeling, blurring lines between defects and variability, and limits of classical scaling. This talk addresses these issues and discusses new approaches they require.
Keywords
SRAM chips; SRAM design; design validation; margining methods; memory structures; Educational institutions; Helium; Libraries; Manufacturing; Random access memory; Research and development; Uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design and Testing, 2007. MTDT 2007. IEEE International Workshop on
Conference_Location
Taipei
ISSN
1087-4852
Print_ISBN
978-1-4244-1656-1
Electronic_ISBN
1087-4852
Type
conf
DOI
10.1109/MTDT.2007.4547605
Filename
4547605
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