DocumentCode
1918166
Title
Future trend of flash memories
Author
Yi-Chou Chen ; Liu, Richard
fYear
2007
fDate
3-5 Dec. 2007
Firstpage
17
Lastpage
18
Abstract
Summary form only given. Flash memories have provided reliable solid-state storage solutions for over twenty years. In the last few years we have seen an explosive growth of NAND flash, fueled by digital camera, USB, MP3, iPhone and numerous new mobile applications. However, this phenomenal boom is silently threatened by scaling limitations intrinsically built into the flash devices. Old challenges such as scaling the charge tunneling oxide have remained unconquered (and now proven unconquerable) for nearly a decade, and new challenges such as floating gate cross talk become more serious with scaling. Will flash technology be simply a brief flash in the history of semiconductor? In this talk we will start with the flash memory technology and market trend. We will then discuss the scaling issues for NOR and NAND floating gate devices, and their fundamental limitations. Potential solutions, including both new devices and architecture and completely new types of non-volatile memory will then be discussed. Recent progresses in new NAND and NOR flash memory solutions or substitutes such as TANOS, BE-SONOS, 3D stacking and phase change memory will be examined in considerable details.
Keywords
flash memories; logic gates; 3D stacking; BE-SONOS; NAND floating gate device; NOR floating gate device; TANOS; flash memory; market trend; nonvolatile memory; phase change memory; Digital audio players; Digital cameras; Explosives; Flash memory; History; Nonvolatile memory; Solid state circuits; Stacking; Tunneling; Universal Serial Bus;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design and Testing, 2007. MTDT 2007. IEEE International Workshop on
Conference_Location
Taipei
ISSN
1087-4852
Print_ISBN
978-1-4244-1656-1
Electronic_ISBN
1087-4852
Type
conf
DOI
10.1109/MTDT.2007.4547607
Filename
4547607
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