Title :
Effect of Optical Excitation Energy on the MSM-PD Response
Author :
Averin, S.V. ; Kuznetzov, P.I. ; Alkeev, N.V. ; Sachot, R.
Author_Institution :
RAS, Moscow
Abstract :
Effect of optical excitation energy on the MSM-detector performance is analyzed and discussed. The impulse response of GaN-based MSM-detector is favorably compared with GaAs MSM-device. We propose some guidelines for the design and optimization of MSM-detectors.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; metal-semiconductor-metal structures; photodetectors; wide band gap semiconductors; GaAs; GaN; MSM-PD response; MSM-detector; optical excitation energy effect; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; Photonics;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368788
