DocumentCode :
1918182
Title :
Investigation of Dynamic Memory Effects in Si-dot Devices
Author :
De Salvo, B. ; Fernandes, A. ; Ghibaudo, Gerard ; Guillaumot, B. ; Baron, T. ; Reimbold, G.
Author_Institution :
LETI-CEA, Grenoble, France
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
280
Lastpage :
283
Keywords :
Current measurement; Dielectric devices; Dielectric measurements; Kinetic theory; Nanoscale devices; Steady-state; Temperature measurement; Transconductance; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194769
Filename :
1503699
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1918182
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