DocumentCode
1918182
Title
Investigation of Dynamic Memory Effects in Si-dot Devices
Author
De Salvo, B. ; Fernandes, A. ; Ghibaudo, Gerard ; Guillaumot, B. ; Baron, T. ; Reimbold, G.
Author_Institution
LETI-CEA, Grenoble, France
fYear
2000
fDate
11-13 September 2000
Firstpage
280
Lastpage
283
Keywords
Current measurement; Dielectric devices; Dielectric measurements; Kinetic theory; Nanoscale devices; Steady-state; Temperature measurement; Transconductance; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194769
Filename
1503699
Link To Document