• DocumentCode
    1918251
  • Title

    Dynamics of Punch-Through and Non Punch-Through IGBT Turn-On Mechanism in Resonant Converters

  • Author

    Widjaja, I. ; Kumia, A. ; Divan, D. ; Shenai, K.

  • Author_Institution
    Department of Electrical and Computer Engineering, 1415 Johnson Drive, University of Wisconsin-Madison, Madison, WI 53706-1691
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    229
  • Lastpage
    232
  • Abstract
    Dynamic saturation effect on the forward voltage drop in IGBT under varying di/dt turn-on is reported. Two different punch-through and non punch-through IGBT structures were studied using mixed device and circuit simulations to investigate the mechanism which leads to excessive forward voltage drop and to make a performance comparison between the two structures.
  • Keywords
    Circuit simulation; Circuit testing; Computational modeling; Conductivity; Insulated gate bipolar transistors; Inverters; Resonance; Switching circuits; Zero current switching; Zero voltage switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1918251