Title :
Measurement of the Vertical and Lateral Diffusion of Interstitials in Si
Author :
Peters, C.J. ; Xu, D. -X ; McCaffrey, J. ; Rolfe, S.J. ; Noel, J.-P. ; Tarr, N.G.
Author_Institution :
Department of Electronics, Carleton University, Ottawa, Ontario K1S 5B6, Canada
Abstract :
The enhanced diffusion of boron and XTEM measurements were used to qualitatively measure the lateral and vertical diffusion of implantation induced interstitials in silicon. It is also found that platinum silicide contacts can be used to reduce the effects of implant induced damage while maintaining low contact resistance.
Keywords :
Boron; Councils; Electrical resistance measurement; Implants; Platinum; Rapid thermal annealing; Rapid thermal processing; Silicidation; Silicon; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
