Simulations of flux uniformity for C12, BC13, and N2 chemistries in the Sandia inductively coupled GEC reactor

Summary form only given, as follows. Numerical simulations are performed to estimate the flux uniformity at the wafer surface for various mixtures of C12, BC13 and N2, in the Sandia laboratory ICP reactor. To improve metal etch uniformity, it is desirable that the ion and neutral fluxes have uniform profiles across the wafer surface. We also investigate the effect of a ceramic focus ring on the flux uniformity reactor. The focus ring plays an important role in influencing the boundary conditions for the particle fluxes at the wafer edge thereby effecting the flux uniformity across the wafer surface. Numerical simulations will provide insight into the various conditions that may affect flux uniformity. In addition, we will also perform parametric studies of C12, BCL3 and N2 mixtures for the bulk plasma and compare with experimental data. These simulations will include variations in pressure, mixture ratio and power. The calculations will be performed using the HPEM and MPRES reactor simulation models.