Simulation of Internal Gettering Sites in Czochralski Silicon

The formation of oxygen induced defects/dislocation complexes, determining the internal gettering of unwanted metallic contaminants in Cz-silicon is studied during LO-HI, and multi-step CMOS type thermal anneals, The simulation model, which is based on a combination of rate equations and Fokker-Planck equations, describes oxygen precipitation and stacking fault formation simultaneously. The simulation results show good agreement with the experimental results taken from the literature.