Title :
Determination of Reaction Barrier Energies in the Case of Gold Diffusion
Author :
Ghaderi, K. ; Hobler, G. ; Budil, M. ; Mader, L. ; Schulze, H.-J.
Author_Institution :
Vienna University of Technology, GuÃ\x9fhausstraÃ\x9fe 27-29/3598, A-1040 Vienna, Austria
Abstract :
New experiments on short-time diffusion of gold in silicon are presented. Diffusion of gold in silicon is investigated in the temperature range of 900°C to 1100°C. The values of the barrier energies for both the gold-point defect reactions and the Frenkel pair reaction have been determined as EAu/I = 0.482eV, EAuI/V= 0.971eV, and EI/V = 0.30eV.
Keywords :
Atmospheric modeling; Computer aided software engineering; Conductivity; Gold; Laboratories; Microelectronics; Semiconductor device modeling; Semiconductor process modeling; Silicon; Temperature distribution;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
