Title :
Role of interface and bulk defect-states in the low-voltage leakage conduction of ultrathin oxides
Author :
Ielmini, D. ; Spinelli, A.S. ; Lacaita, A. ; Ghidini, G.
Author_Institution :
Politecnico di Milano, Italy
fDate :
11-13 September 2000
Keywords :
Current density; Degradation; Electron traps; Interface states; Low voltage; MOS devices; Monitoring; Spontaneous emission; Stress; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194777
