• DocumentCode
    1918478
  • Title

    Adaptation of "Drain Current Charge Pumping Technique" for Interface Trap Characterization in Short Channel MOS Transistors

  • Author

    Fikry, Wael ; Ragheb, Marwa ; Haddara, Hisham

  • Author_Institution
    Ain Shams University,Cairo, Egypt
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    316
  • Lastpage
    319
  • Keywords
    Analytical models; Charge pumps; Current measurement; Degradation; Electric resistance; Electrical resistance measurement; Frequency; MOSFETs; P-i-n diodes; Parasitic capacitance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194778
  • Filename
    1503708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1918478