DocumentCode
1918498
Title
Single Trap Profiling by Charge Pumping
Author
Okhonin, S. ; Meyer, V. ; Ils, A. ; Fazan, P. ; Risch, L. ; Hoffman, F.
Author_Institution
Swiss Federal Institute of Technology, Lausanne, Switzerland
fYear
2000
fDate
11-13 September 2000
Firstpage
320
Lastpage
323
Keywords
Capacitance-voltage characteristics; Charge pumps; Current measurement; Electron traps; FETs; Leg; MOSFETs; Pulse measurements; Telegraphy; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194779
Filename
1503709
Link To Document