Title :
A CPU Efficient Electron Mobility Model for MOSFET Simulation with Quantum Corrected Charge Densities
Author :
Neinhüs, B. ; Nguyen, C.D. ; Jungemann, C. ; Meinerzhagen, B.
Author_Institution :
Universit¨at Bremen, Germany
fDate :
11-13 September 2000
Keywords :
Convergence; Degradation; Doping; Electron mobility; MOS devices; MOSFET circuits; Quantum mechanics; Rough surfaces; Semiconductor process modeling; Surface roughness;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194782
