Title :
Large signal compact modeling of the dependence of Early voltage with driving mode in Si/Si(1-x)Ge(x) bipolar transistors
Author :
Assous, M. ; Mouis, M.
Author_Institution :
France Telecom, Meylan, France
fDate :
11-13 September 2000
Keywords :
Bipolar transistors; Current measurement; Electrons; Force measurement; Germanium silicon alloys; Semiconductor process modeling; Silicon germanium; Spontaneous emission; Telecommunications; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194785
