DocumentCode :
1918675
Title :
Large signal compact modeling of the dependence of Early voltage with driving mode in Si/Si(1-x)Ge(x) bipolar transistors
Author :
Assous, M. ; Mouis, M.
Author_Institution :
France Telecom, Meylan, France
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
344
Lastpage :
347
Keywords :
Bipolar transistors; Current measurement; Electrons; Force measurement; Germanium silicon alloys; Semiconductor process modeling; Silicon germanium; Spontaneous emission; Telecommunications; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194785
Filename :
1503715
Link To Document :
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