DocumentCode
1918769
Title
RF mixers using standard digital CMOS 0.35 /spl mu/m process
Author
Geffroy, V. ; De Astis, G. ; Bergeault, E.
Author_Institution
ACCO, Saint-Germain-En-Laye, France
Volume
1
fYear
2001
fDate
20-24 May 2001
Firstpage
83
Abstract
The performance of doubly-balanced active and resistive RF CMOS mixers is presented following measurements at 1.8-GHz RF frequency. The active mixer has demonstrated 10.4-dB gain, 7-dB SSB NF, -6 dBm IIP3 and consumes 9.7 mA under 3 V. The passive mixer has demonstrated 7.5-dB loss, 10-dB SSB NF and +16-dBm of input IP3.
Keywords
CMOS digital integrated circuits; UHF integrated circuits; UHF mixers; active networks; passive networks; 0.35 micron; 1.8 GHz; 10.4 dB; 7.5 dB; active RF CMOS mixers; doubly-balanced; gain; linearity; loss; performance; resistive RF CMOS mixers; standard digital CMOS; three-layer metal planar process; Amplitude modulation; CMOS process; CMOS technology; Costs; Foundries; Mixers; Noise measurement; Production; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966844
Filename
966844
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