DocumentCode
1918772
Title
Noise Analysis of Si-MOSFET´s with Gate Oxides Deposited by Low Pressure RTCVD
Author
Morfouli, P. ; McLarty, P. ; Misra, V. ; Häuser, J. ; Wortman, J.J. ; Ouisse, T. ; Ghibaudo, G.
Author_Institution
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs (URA CNRS)-ENSERG, 23 rue des Martyrs, BP 257, 38016 Grenoble, FRANCE
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
313
Lastpage
316
Abstract
Fabrication of MOSFET´s with deposited instead of thermal gate oxide could provide the ability to reduce the thennal budget of CMOS technology process. To compete with thennal oxides, deposited oxides must demonstrate that they combine a high permittivity, high reliability and a good interface quality. In this paper we compare the electrical properties of MOSFET´s fabricated with thermal oxides and RTCVD deposited oxides, using low frequency noise measurements (1Hz to 5kHz). A detailed analysis of the transport measurements over a wide range of temperatures (20K - 300K) and the correlation with the noise properties are also presented.
Keywords
Fabrication; Frequency measurement; Low-frequency noise; Noise measurement; Oxidation; Permittivity measurement; Semiconductor device noise; Silicon; Temperature distribution; Thermal engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435725
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