DocumentCode
1918829
Title
Comparison of two High-Frequency Noise Characterization Methods for SiGe HBTs
Author
Malm, B.G. ; Grahn, J.V. ; Östling, M. ; Stenarson, J.
Author_Institution
Royal Institute of Technology, Kista, Sweden
fYear
2000
fDate
11-13 September 2000
Firstpage
372
Lastpage
375
Keywords
Circuit noise; Frequency; Germanium silicon alloys; Hafnium; Heterojunction bipolar transistors; Noise figure; Noise measurement; Silicon germanium; Time measurement; Working environment noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194792
Filename
1503722
Link To Document