Title :
Scalable High Voltage Trenchgate Transistor for Flash
Author :
Landgraf, E. ; Hofmann, F. ; von Philipsborn, H.
Author_Institution :
University of Regensburg, Germany
fDate :
11-13 September 2000
Keywords :
Breakdown voltage; Charge pumps; Decoding; Flash memory; Geometry; Leakage current; Liquid crystal displays; MOSFET circuits; Scalability; Switching circuits;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194794
