LF Noise Investigations of 0.3 μm Gate n-MOSFETs Reliability and Micrometre Nitrided Gate Oxide MOSFETs

A characterization of the low frequency noise of Si MOS devices from a 0.35 μm CMOS technology after uniform gate stress and nitridation step is presented. It is found that stress alters noise spectra differently depending on the device area. The spectra can be increased uniformly or may be distorted after stress, indicating a net creation of interface traps. On the other side, nitridation is found to increase substantially the amplitude of LF noise, indicating the presence of higher density of slow interface traps induced by nitrogen incorporation.