DocumentCode
1918933
Title
3-D Simulation of Low Pressure Chemical Vapor Deposition
Author
Bar, Eberhard ; Lorenz, J.
Author_Institution
Fraunhofer-Institut fÿr Integrierte Schaltungen, Bereich Bauelementetechnologie, Schottkystrasse 10, D-91058 Erlangen, Germany
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
335
Lastpage
338
Abstract
A new method for the three-dimensional (3-D) simulation of LPCVD using a modified string algorithm combined with a redistribution model is presented. Simulation results for rectangular holes are shown. The step coverage predicted by 3-D simulations is compared to step coverages from 2-D simulations. It is shown that the considerable differences observed require the use of 3-D algorithms for the simulation of LPCVD in deep submicron devices.
Keywords
Chemical vapor deposition; Computational modeling; Equations; Information geometry; Kinetic theory; Predictive models; Probability; Semiconductor device modeling; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435730
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