Title :
A family of Q, V and W-band monolithic resistive mixers
Author :
Kimishima, M. ; Ataka, T. ; Okabe, H.
Author_Institution :
Advantest Corp., Saitama, Japan
Abstract :
This paper presents the design, fabrication, and testing results of Q, V, and W-band monolithic broadband resistive mixers for measurement instruments. Low conversion loss and good flatness of the frequency response across a wide frequency range were achieved using an InGaP-InGaAs HEMT biased in the resistive mode. Three mixers in Q, V, and W-band show similar excellent measured performance. Q and V-band mixers were designed using two Lange couplers. The Q-band mixer exhibits a conversion loss of 11.7 dB and a loss flatness of 1.2 dB for 11 GHz IF frequency over 42-56 GHz RF frequency band. The V-band mixer exhibits a conversion loss of 12.8 dB and a loss flatness of 1.0 dB for 18 GHz IF frequency over 56-72 GHz RF frequency band. On the other hand, the W-band mixer using a 180-degree balun, shows a conversion loss of 10.6 dB and a loss flatness of 1.2 dB for 30 GHz IF frequency over a 72-84 GHz RF frequency band.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; gallium compounds; indium compounds; integrated circuit design; millimetre wave mixers; 10.6 to 12.8 dB; 11 to 30 GHz; 180 degree balun; 42 to 84 GHz; EHF; InGaP-InGaAs; Lange couplers; MM-wave mixers; Q-band monolithic mixers; V-band monolithic mixers; W-band monolithic mixers; broadband resistive mixers; conversion loss; loss flatness; measurement instruments; mixer fabrication; monolithic resistive mixers; resistive mode HEMT devices; resistive mode biasing; Couplers; Fabrication; Frequency conversion; Frequency response; HEMTs; Instruments; Mixers; Q measurement; Radio frequency; Testing;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966852