A high aspect ratio via hole dry etching technology for high power GaAs MESFET

Author

Sumitani, K. ; Komaru, M. ; Kobiki, M. ; Higaki, Y. ; Mitsui, Y. ; Takano, H. ; Nishitani, K.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

207

Lastpage

210

Abstract

The dry etching technique is investigated to achieve high-aspect-ratio via holes with smooth inner surface for the application of high-power GaAs MESFET with the source island via hole (SIV) structure. Mask materials and etching conditions are optimized to obtain a high aspect ratio of 2.6. The uniformity of the etched depth is +or-3.5% deviation across a 3-in wafer, and the reproducibility is +or-5.5% deviation. This technique allows the SIV FET with dry etched via holes to realize a packing density 1.7 times higher than that of conventional FETs. At 18 GHz, the SIV FET with 1350- mu m gate width provides a power output of 26.2 dBm at 1-dB gain compression and a linear power gain of 7.5 dB.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; power integrated circuits; power transistors; solid-state microwave devices; sputter etching; 1350 micron; 18 GHz; 3 in; 7.5 dB; GaAs; RIE; dry etched via holes; dry etching technique; dry etching technology; etched depth; etching conditions; gain compression; gate width; high power GaAs MESFET; high-aspect-ratio via holes; mask materials; packing density; power gain; power output; reproducibility; semiconductors; smooth inner surface; source island via hole; uniformity; Dry etching; Fingers; Gain; Gallium arsenide; MESFETs; MMICs; Microwave FETs; Radio frequency; Reproducibility of results; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69327

Filename

69327