Title :
Optimization of extension doping technology for roll-off suppression of industrial 0.1-um pMOSFETs
Author :
Lenoble, D. ; Josse, E. ; Grouillet, A. ; Julien, C. ; Skotnicki, T. ; Walther, S. ; Liebert, R.B.
Author_Institution :
France Telecom, Meylan, France
fDate :
11-13 September 2000
Keywords :
Atomic measurements; Boron; CMOS technology; Communication industry; Doping; Fabrication; Ion beams; Ion implantation; MOSFETs; Sea measurements;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194799
