DocumentCode :
1919113
Title :
Full CMP Integration of TiN Damascene Metal Gate Devices
Author :
Achard, H. ; Ducroquet, F. ; Coudert, F. ; Previtali, B. ; Lugand, J.F. ; Ulmer, L. ; Farjot, T. ; Gobil, Y. ; Heitzmann, M. ; Tedesco, S. ; Nier, M.E. ; Deleonibus, S.
Author_Institution :
LETI-CEA, Grenoble, France
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
408
Lastpage :
411
Keywords :
Boron; Capacitors; Circuits; Degradation; Dielectrics; Fabrication; Implants; Inorganic materials; Tin; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194801
Filename :
1503731
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1919113
