Title :
On the InGaP/In(x)Ga(1-x)As Pseudomorphic High Electron-Mobility Transistor s with High-Temperature Reliabilities
Author :
Liu, W.C. ; Chang, W.L. ; Lour, W.S. ; Yu, K.H. ; Lin, K.W. ; Lin, K.P. ; Yen, C.H.
Author_Institution :
National Cheng-Kung University, Tainan, Taiwan
fDate :
11-13 September 2000
Keywords :
Carrier confinement; Degradation; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Microwave devices; PHEMTs; Silicon carbide; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194806
