On the InGaP/In(x)Ga(1-x)As Pseudomorphic High Electron-Mobility Transistor s with High-Temperature Reliabilities

Author

Liu, W.C. ; Chang, W.L. ; Lour, W.S. ; Yu, K.H. ; Lin, K.W. ; Lin, K.P. ; Yen, C.H.

Author_Institution

National Cheng-Kung University, Tainan, Taiwan

fYear

2000

fDate

11-13 September 2000

Firstpage

428

Lastpage

431

Keywords

Carrier confinement; Degradation; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Microwave devices; PHEMTs; Silicon carbide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194806

Filename

1503736

Link To Document