Title :
Local temperature measurement of micro-sized metallization line by using scanning thermal microscopy
Author :
Zhiguo, Li ; Dong, Wang ; Yuan, Ji ; Yaohai, Cheng ; Weiling, Guo ; Yinghua, Sun ; Wanrong, Zhang ; Lifang, Wu
Author_Institution :
Reliability Phys. Lab., Beijing Polytech. Univ., China
Abstract :
A novel technique of the scanning thermal microscope was used to measure surface morphology and temperature distribution of Al-Si-Cu metallization line with a micro-sized spatial resolution. The metal line was heated by a Ti-W self-heating buried layer. The localized temperature and micro-sized defects on the line were detected by a thin film thermistor tip for determining the mean time to failure of electromigration and studying failure mechanisms. The temperature difference along the whole line was about 2°C, which was in agreement with that obtained by infrared emission microscope
Keywords :
atomic force microscopy; electromigration; integrated circuit interconnections; integrated circuit metallisation; surface topography; temperature distribution; temperature measurement; thermal stresses; AFM with thermal tip; Al-Si-Cu; electromigration; failure mechanisms; local temperature measurement; mean time to failure; micro-sized metallization line; scanning thermal microscopy; self-heating buried layer; surface morphology; temperature distribution; thermal stresses; thin film thermistor tip; Electromigration; Failure analysis; Metallization; Microscopy; Spatial resolution; Surface morphology; Temperature distribution; Temperature measurement; Thermistors; Transistors;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2000. Sixteenth Annual IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-5916-X
DOI :
10.1109/STHERM.2000.837066
