Title :
P2–28: Evaluation of simplified simulation approach for thin-film type gated field-emitter
Author :
Luo, Jie ; Chen, Jun ; Deng, Shao Zhi ; Xu, Ning Sheng
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
Abstract :
A simplified simulation approach has been introduced for gated field emitters. F-N equation fitted with experimental field emission characteristic is used to calculate the characteristics of a double-gated field emitters. By assuming the cathode is a flat thin film, the anode current and gate current are simulated. The validity of the simulation is evaluated by experimental results.
Keywords :
anodes; carbon nanotubes; cathodes; electron field emission; nanotube devices; thin film devices; C; Fowler-Nordheim equation; anode current; field emission characteristic; flat thin film cathode; gate current; high-density-packed nanoemitter; thin-film type gated field-emitter; Anodes; Biological system modeling; Cathodes; Computational modeling; Films; Logic gates; Mathematical model; CNT film; cold cathode; field-emitter; simulation;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563139
