An Analytical Hot-Carrier Degradation Model for LDD NMOSFETs

Author

Goo, Jung-Suk ; Kim, Young-Gwan ; l´Yee, Hyeokjae ; Kwon, Ho-Yup ; Shin, Hyungsoon

Author_Institution

Central R&D Laboratory, GoldStar Electron Co., Ltd., 16, Woomyeon, Seocho, Seoul, 137-140, KOREA

fYear

1994

fDate

11-15 Sept. 1994

Firstpage

425

Lastpage

428

Keywords

Analytical models; Charge pumps; Degradation; Hot carriers; Implants; Interface states; MOSFET circuits; Predictive models; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1994. ESSDERC '94. 24th European

Conference_Location

Edinburgh, Scotland

Print_ISBN

0863321579

Type

Filename

5435751

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