Title :
P2–22: Stable emission characteristics for low work function titanium nitride transfer mold field emitter arrays in harsh environment
Author :
Nakamoto, Masayuki ; Moon, Jonghyun
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
Abstract :
Low work function titanium nitride (TiN) Transfer Mold field emitter arrays (TiN-FEAs) have been fabricated by combining the Transfer Metal Mold fabrication method and the emitter material coating method to realize stable vacuum nanoelectronic devices and aerospace nanodevices for electric propulsion engines in the harsh environment such as strong plasma and radical atmospheres. The average tip radii and standard deviations of tip radii of TiN-FEA were 6.8 nm and 1.9 nm, respectively. Therefore, TiN-FEA exhibited an extreme sharpness and high uniformity. The turn-on field of TiN-FEAs was as low as 15.4 V/μm at the short distance of less than 10 μm between anode and emitter. Turn-on fields of Ni-FEAs showed the 4.0 times increase from 14.9 V/μm to 59.4 V/μm with the increase of the in-situ oxygen radical treatment time. However, turn-on fields of TiN-FEAs showed the 1.2 times increase from 15.4 V/μm to 18.8 V/μm. The fluctuation rate of Ni-FEA with or without radical treatment was as low as less than ±10% and ±4%. However, those of TiN-FEA with or without radical treatment were as low as less than ±5.1% and ±2.5%, respectively. Therefore, the TiN-FEAs exhibit stable field emission characteristics in harsh environments.
Keywords :
avionics; electric propulsion; field emitter arrays; nanoelectronics; nanofabrication; surface treatment; titanium compounds; work function; TiN; aerospace nanodevices; average tip radii; electric propulsion engines; emitter material coating; fluctuation rate; harsh environment; in-situ oxygen radical treatment time; low work function field emitter arrays; tip radii standard deviations; titanium nitride field emitter arrays; transfer metal mold fabrication; transfer mold field emitter arrays; turn-on fields; vacuum nanoelectronic devices; Coatings; Fabrication; Field emitter arrays; Fluctuations; Materials; Tin; Transfer Mold field emitter arrays; harsh environment; low work function; titanium nitride;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
DOI :
10.1109/IVNC.2010.5563145