Title :
Analytical Calculation of Avalanche and Thermal Snapback Points in Bipolar Transistors
Author :
Krabbenborg, B.H. ; de Graaff, H.C. ; Mouthaan, A.J.
Author_Institution :
University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.
Abstract :
Analytical calculations of thermal-and avalanche snapback points are given to predict when thermal runaway in a bipolar transistor is initiated. These snapback points are used to construct the Safe Operating Area of the transistor in the case of a current and a voltage controlled base.
Keywords :
Bipolar transistors; Breakdown voltage; Equations; Hysteresis; Photonic band gap; Power dissipation; Semiconductor optical amplifiers; Temperature distribution; Thermal resistance; Voltage control;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
