• DocumentCode
    1919542
  • Title

    Current Dependence of Small Signal Base - Collector Capacitance in Microwave AlGaAs/GaAs HBTs

  • Author

    Ahmad, T. ; Rezazadeh, A.A. ; Gill, S.S.

  • Author_Institution
    Department of Electronic and Electrical Engineering, King´´s College, University of London, Strand, London, WC2R 2LS, UK
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    443
  • Lastpage
    446
  • Abstract
    The current dependence of small signal base-collector capacitance, Cbc and base series resistance, Rb, extracted directly from S-parameters, has been investigated in microwave n-p-n AlGaAs/GaAs HBTs. It is found that the magnitude of Cbc at Vce=3V in our devices is relatively constant at low current densities but reduces at current density of 2×103A/cm2 and then increases rapidly at a critical value of 3×104A/cm2. The results obtained are compared with a physics based analytical model and shown to exhibit good agreement.
  • Keywords
    Analytical models; Current density; Cutoff frequency; Educational institutions; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Parasitic capacitance; Physics; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1919542