DocumentCode
1919568
Title
Microwave Noise Performance of Self-Aligned GaInP/GaAs HBT
Author
Roux, J.P. ; Escotte, L. ; Plana, R. ; Graffeuil, J. ; Delage, S.L. ; Blanck, H.
Author_Institution
LAAS-CNRS et Universit? Paul Sabatier., 7, Avenue du Colonel Roche. 31077 TOULOUSE Cedex FRANCE
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
447
Lastpage
450
Abstract
We report recent results obtained on GaLaP/GaAs heterojunction bipolar transistors. A small-signal and noise model is used to investigate RF and noise characteristics.
Keywords
Circuit noise; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Microwave transistors; Noise generators; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435756
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