• DocumentCode
    1919568
  • Title

    Microwave Noise Performance of Self-Aligned GaInP/GaAs HBT

  • Author

    Roux, J.P. ; Escotte, L. ; Plana, R. ; Graffeuil, J. ; Delage, S.L. ; Blanck, H.

  • Author_Institution
    LAAS-CNRS et Universit? Paul Sabatier., 7, Avenue du Colonel Roche. 31077 TOULOUSE Cedex FRANCE
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    447
  • Lastpage
    450
  • Abstract
    We report recent results obtained on GaLaP/GaAs heterojunction bipolar transistors. A small-signal and noise model is used to investigate RF and noise characteristics.
  • Keywords
    Circuit noise; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Microwave transistors; Noise generators; Radio frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435756