DocumentCode :
1919568
Title :
Microwave Noise Performance of Self-Aligned GaInP/GaAs HBT
Author :
Roux, J.P. ; Escotte, L. ; Plana, R. ; Graffeuil, J. ; Delage, S.L. ; Blanck, H.
Author_Institution :
LAAS-CNRS et Universit? Paul Sabatier., 7, Avenue du Colonel Roche. 31077 TOULOUSE Cedex FRANCE
fYear :
1994
fDate :
11-15 Sept. 1994
Firstpage :
447
Lastpage :
450
Abstract :
We report recent results obtained on GaLaP/GaAs heterojunction bipolar transistors. A small-signal and noise model is used to investigate RF and noise characteristics.
Keywords :
Circuit noise; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Microwave transistors; Noise generators; Radio frequency; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
Print_ISBN :
0863321579
Type :
conf
Filename :
5435756
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1919568
بازگشت