DocumentCode
1919593
Title
High Power Pseudomorphic Hemts´ with Doped Channel
Author
Rakov, Yu.N. ; Toropov, A.I. ; Mjakishev, Yu.B. ; Zhuravlev, K.S. ; Chibaev, V.P.
Author_Institution
Joint Stock Co., Novosibirsk
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
554
Lastpage
555
Abstract
The design principles and technology of growth of pseudomorphic AIGaAs/lnGaAs heterostructure with silicon-doped canal for high frequency high power transistors as well as fabrication technology of the transistors were developed. Special attention has been paid to growth of the Al-GaAs/lnGaAs heterojunction. PHEMTs´ with the specific output power of 1.1 W/mm, PAE of 45.6 % and power gain of 6.8 dB at 17.7 GHz have been fabricated.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; power HEMT; semiconductor heterojunctions; AlGaAs-InGaAs; doped channel; fabrication technology; frequency 17.7 GHz; power pseudomorphic HEMT; power transistors; pseudomorphic semiconductor heterostructure; silicon-doped canal; Electrons; Gallium arsenide; Indium gallium arsenide; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location
Crimea
Print_ISBN
978-966-335-012-7
Type
conf
DOI
10.1109/CRMICO.2007.4368848
Filename
4368848
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