Title :
A Reference Geometry Based Scaling Approach for Bipolar Transistor Model Mextram
Author :
Wu, Hsien-Chang ; Mijalkovic, Slobodan ; Burghartz, Joachim N.
Author_Institution :
Lab. of High Frequency Technol. & Components, Delft Univ. of Technol.
Abstract :
A reference geometry based scaling approach for bipolar transistor model Mextram has been created and implemented in AHDL Verilog-A. The scaling is mainly based on three different physical properties of the Mextram parameters, which scale with geometry of the bipolar transistor. All the scaling parameters in the scaling equations are extracted directly from the measurement data of various geometries. The new scaleable model simulation results show good fit to CV, DC, Ft and S11, S21 up to 40 GHz measured from high-speed SiGe HBTs
Keywords :
bipolar transistors; geometry; hardware description languages; semiconductor device models; AHDL Verilog-A; Mextram; bipolar transistor model; reference geometry; scaling approach; scaling equations; Bipolar transistors; Equations; Geometry; Germanium silicon alloys; Hardware design languages; Integrated circuit measurements; Libraries; Protection; Silicon germanium; Solid modeling; Mextram model; SiGe HBT; VHDL Verilog-A; scalable model;
Conference_Titel :
Computer as a Tool, 2005. EUROCON 2005.The International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0049-X
DOI :
10.1109/EURCON.2005.1630180
