A Reference Geometry Based Scaling Approach for Bipolar Transistor Model Mextram

Author

Wu, Hsien-Chang ; Mijalkovic, Slobodan ; Burghartz, Joachim N.

Author_Institution

Lab. of High Frequency Technol. & Components, Delft Univ. of Technol.

Volume

2

fYear

2005

fDate

21-24 Nov. 2005

Firstpage

1239

Lastpage

1242

Abstract

A reference geometry based scaling approach for bipolar transistor model Mextram has been created and implemented in AHDL Verilog-A. The scaling is mainly based on three different physical properties of the Mextram parameters, which scale with geometry of the bipolar transistor. All the scaling parameters in the scaling equations are extracted directly from the measurement data of various geometries. The new scaleable model simulation results show good fit to CV, DC, Ft and S₁₁, S₂₁ up to 40 GHz measured from high-speed SiGe HBTs

Keywords

bipolar transistors; geometry; hardware description languages; semiconductor device models; AHDL Verilog-A; Mextram; bipolar transistor model; reference geometry; scaling approach; scaling equations; Bipolar transistors; Equations; Geometry; Germanium silicon alloys; Hardware design languages; Integrated circuit measurements; Libraries; Protection; Silicon germanium; Solid modeling; Mextram model; SiGe HBT; VHDL Verilog-A; scalable model;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer as a Tool, 2005. EUROCON 2005.The International Conference on

Conference_Location

Belgrade

Print_ISBN

1-4244-0049-X

Type

conf

DOI

10.1109/EURCON.2005.1630180

Filename

1630180