• DocumentCode
    1919625
  • Title

    A New In0.53Al0.22Ga0.25As/InP Heterojunction Bipolar Transistor Grown by LP-MOCVD

  • Author

    Wu, Y.H. ; Su, J.S. ; Hsu, W.-C. ; Liu, W.C. ; Lin, W.

  • Author_Institution
    Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, R.O.C.
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    455
  • Lastpage
    458
  • Abstract
    A lattice-matched In0.53Al0.22Ga0.25 As/InP heterojunction bipolar transistor has been fabricated successfully by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. This structure reveals a current gain of 85 at a collector density of 145 A/cm2, along with an offset voltage as low as 50 mV. No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Me¿nwhile, the larger valence band discontinuity (¿Ev= 460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement.
  • Keywords
    Chemical vapor deposition; Circuits; Current measurement; Energy measurement; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Performance gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1919625