Title :
A New In0.53Al0.22Ga0.25As/InP Heterojunction Bipolar Transistor Grown by LP-MOCVD
Author :
Wu, Y.H. ; Su, J.S. ; Hsu, W.-C. ; Liu, W.C. ; Lin, W.
Author_Institution :
Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, R.O.C.
Abstract :
A lattice-matched In0.53Al0.22Ga0.25 As/InP heterojunction bipolar transistor has been fabricated successfully by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. This structure reveals a current gain of 85 at a collector density of 145 A/cm2, along with an offset voltage as low as 50 mV. No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Me¿nwhile, the larger valence band discontinuity (¿Ev= 460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement.
Keywords :
Chemical vapor deposition; Circuits; Current measurement; Energy measurement; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Performance gain;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
