DocumentCode
1919633
Title
Accurate measurement of interface thermal resistance by means of a transient method
Author
Bosch, Eric G.T. ; Lasance, Clemens J M
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
2000
fDate
2000
Firstpage
167
Lastpage
173
Abstract
The transient method for the measurement of thermal interface resistance, discussed in an earlier SEMITHERM contribution, has been improved. A novel way of obtaining the thermal resistance from an experiment is presented. It is shown that this method results in high accuracy when used in conjunction with a numerical model of the whole setup. Further improvements are discussed, eventually enabling the determination of thermal interface resistances with an error margin of a few percent, within a measurement time of a few minutes
Keywords
numerical analysis; thermal resistance measurement; transients; SEMITHERM; interface thermal resistance; measurement time; numerical model; thermal conductivity measurement; transient method; Anisotropic magnetoresistance; Contact resistance; Electrical resistance measurement; Electronic packaging thermal management; Phase change materials; Substrates; Surface resistance; Thermal conductivity; Thermal engineering; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 2000. Sixteenth Annual IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-5916-X
Type
conf
DOI
10.1109/STHERM.2000.837080
Filename
837080
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