DocumentCode
1919672
Title
2 and 4-bit DC-18 GHz microstrip MEMS distributed phase shifters
Author
Hayden, J.S. ; Malczewski, A. ; Kleber, J. ; Goldsmith, C.L. ; Rebeiz, G.M.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
1
fYear
2001
fDate
20-24 May 2001
Firstpage
219
Abstract
Two and four-bit wideband distributed microstrip phase shifters have been developed on a 21 mil (533 /spl mu/m) silicon substrate for DC-18 GHz operation. Presented here is the first demonstration of microstrip distributed MEMS transmission line (DMTL) designs, periodically loaded by MEMS varactors in series with a fixed value microstrip radial stub. The two-bit design results in a reflection coefficient less than -10 dB,an average insertion loss of -2.8 dB, and a maximum phase shift of 262/spl deg/ at 16 GHz. The four-bit design results in a reflection coefficient less than -9 dB, an average insertion loss of -3.0 dB, and a maximum phase shift of 333/spl deg/ at 16 GHz.
Keywords
losses; micromechanical devices; microstrip components; microwave phase shifters; varactors; -2.8 dB; -3.0 dB; 2 to 18 GHz; 21 mil; 533 micron; MEMS varactors; average insertion loss; distributed MEMS transmission line; fixed value microstrip radial stub; maximum phase shift; reflection coefficient; wideband distributed microstrip phase shifters; Bridge circuits; Capacitance; Frequency; Impedance; Insertion loss; Micromechanical devices; Microstrip; Phase shifters; Reflection; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966875
Filename
966875
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