New IR Photodetector Based on GaN QWs´ or QDs´ Located in Barrier of AlGaN/GaN Hemt Structure

The design principles and technology of fabricating novel quantum-dot (QD) infrared (IR) detectors based on AlGaN/GaN high-electron-mobility transistors (HEMTs) with GaN QDs inserted into the AlGaN barrier of HEMT (QDIP-HEMT) are proposed. Computation of electron energy levels in GaN/AlGaN QWs´ and QDs´ is carried out and technology of its growth is developed.