A high-performance GaAs SP3T switch for digital cellular systems

Author

Zeji Gu ; Shuyun Zhang ; Johnson, D. ; Belletete, S. ; Ayvazian, M. ; Fryklund, D.

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

Volume

1

fYear

2001

fDate

20-24 May 2001

Firstpage

241

Abstract

A high-performance GaAs SP3T switch has been developed using asymmetrical design of the transmit and receive paths. A combination of stacked FETs and multi-gate PHEMT FETs with high breakdown voltages and large peripheries was implemented in this design. Insertion loss of less than 0.8 dB and isolation greater than 25 dB to 2 GHz were obtained. With a positive 3-V control voltage, power handling of the device exceeded 34 dBm while maintaining second and third harmonic levels better than 65 dBc.

Keywords

HEMT integrated circuits; III-V semiconductors; UHF integrated circuits; cellular radio; digital radio; field effect MMIC; gallium arsenide; microwave switches; semiconductor device breakdown; 2 GHz; 3 V; GaAs; SP3T switch; asymmetrical design; breakdown voltages; digital cellular systems; insertion loss; multi-gate PHEMT FETs; peripheries; power handling; receive paths; second harmonic levels; stacked FETs; third harmonic levels; transmit paths; Communication switching; FETs; Gallium arsenide; Insertion loss; Linearity; PHEMTs; Receiving antennas; Switches; Switching circuits; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966879

Filename

966879