Title :
Low-Frequency Noise Properties of Si/SiGe Heterojunction Bipolar Transistors
Author :
Plana, R. ; Roux, J.P. ; Escotte, L. ; Graffeuil, J. ; Gruhle, A. ; Kibbel, H.
Author_Institution :
LAAS-CNRS et Université Paul Sabatier Toulouse, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex
Abstract :
In this paper we present excellent low-frequency noise performances of passivated Si/SiGe heterojunction bipolar transistor. We report noise corner frequency in the 10 kHz range for the input noise voltage generator and in the 100 kHz range for the input noise current generator. We show that 1/f noise is probably generated both in the distributed base resistance and along the emitter finger.
Keywords :
Frequency; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise level; Noise measurement; Silicon germanium; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
