DocumentCode
1919852
Title
Switches with capacitor cancelled parasitic inductance of FET
Author
Nakahara, K. ; Miyaguchi, K. ; Hieda, M. ; Kurusu, H. ; Iyama, Y. ; Takagi, T.
Volume
1
fYear
2001
fDate
20-24 May 2001
Firstpage
249
Abstract
GaAs SPDT FET switches have been developed with capacitor cancelled parasitic inductance of FET. The switches employed series-shunt configuration. The switches have been shown to have significantly higher isolation and higher frequency operation compared to conventional switch. Isolation of 28.9 dB at 18 GHz and 30 GHz has been achieved.
Keywords
III-V semiconductors; antenna accessories; antenna phased arrays; field effect MMIC; gallium arsenide; inductance; microwave antenna arrays; microwave switches; 18 GHz; 30 GHz; GaAs; SPDT FET switches; capacitor cancelled parasitic inductance; isolation; series-shunt configuration; Capacitors; Communication switching; Degradation; FETs; Frequency; Impedance; Inductance; Shunt (electrical); Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966881
Filename
966881
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