Title :
Switches with capacitor cancelled parasitic inductance of FET
Author :
Nakahara, K. ; Miyaguchi, K. ; Hieda, M. ; Kurusu, H. ; Iyama, Y. ; Takagi, T.
Abstract :
GaAs SPDT FET switches have been developed with capacitor cancelled parasitic inductance of FET. The switches employed series-shunt configuration. The switches have been shown to have significantly higher isolation and higher frequency operation compared to conventional switch. Isolation of 28.9 dB at 18 GHz and 30 GHz has been achieved.
Keywords :
III-V semiconductors; antenna accessories; antenna phased arrays; field effect MMIC; gallium arsenide; inductance; microwave antenna arrays; microwave switches; 18 GHz; 30 GHz; GaAs; SPDT FET switches; capacitor cancelled parasitic inductance; isolation; series-shunt configuration; Capacitors; Communication switching; Degradation; FETs; Frequency; Impedance; Inductance; Shunt (electrical); Switches; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966881
