• DocumentCode
    1919868
  • Title

    ESD protection in deep submicron CMOS technology -- Does the transient matter?

  • Author

    Cheung, Kin P. ; Kamgar, Avid

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ, USA
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    524
  • Lastpage
    527
  • Keywords
    Breakdown voltage; CMOS technology; Degradation; Electric breakdown; Electrostatic discharge; Lead compounds; Protection; Pulse shaping methods; Semiconductor device measurement; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194830
  • Filename
    1503760
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1919868