DocumentCode :
1919869
Title :
P1–6: Compensation of divergence of space charge dominated ion beams using electron injection and confinement in non-uniform magnetic fields
Author :
Nicolaescu, Dan ; Sakai, Shigeki ; Gotoh, Yasuhito ; Ishikawa, Junzo
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
fYear :
2010
fDate :
26-30 July 2010
Firstpage :
40
Lastpage :
41
Abstract :
Advanced ion implantation systems require transportation to wafer of space charge dominated ion beams. Compensation of ion beam divergence may be obtained through electron injection and confinement in regions of non-uniform magnetic fields. Electron sources of choice are field emitter arrays with special properties. Modeling results are presented as proof of concept, together with design aspects for practical optimization.
Keywords :
field emitter arrays; ion beam effects; ion implantation; semiconductor doping; space charge; advanced ion implantation systems; divergence compensation; electron confinement; electron injection; electron sources; field emitter arrays; nonuniform magnetic fields; practical optimization; space charge dominated ion beams; Clouds; Ion beams; Ion implantation; Magnetic confinement; Magnetic fields; Space charge; Trajectory; electron confinement; ion beam neutralization; ion implantation system; magnetic mirror; non-uniform magnetic field; space charge effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
Type :
conf
DOI :
10.1109/IVNC.2010.5563163
Filename :
5563163
Link To Document :
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