A V-Band MMIC SPDT passive HEMT switch using impedance transformation networks

Author

Yu-Jiu Wang ; Kun-You Lin ; Dow-Chih Niu ; Huei Wang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

2001

fDate

20-24 May 2001

Firstpage

253

Abstract

A V-Band MMIC single pole double throw (SPDT) switch using GaAs PHEMT process is designed, fabricated and tested. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off-state in millimeter-wave frequency range. This SPDT switch has a measured isolation better than 30 dB for the off-state and 4 dB insertion loss for the on-state from 53 GHz to 61 GHz. The isolation performance of this design approach outmatches previously published FET switches in this frequency range.

Keywords

HEMT integrated circuits; III-V semiconductors; capacitance; circuit resonance; field effect MIMIC; gallium arsenide; impedance convertors; losses; microwave switches; 4 dB; 53 to 61 GHz; GaAs; MMIC SPDT passive HEMT switch; PHEMT process; V-Band; drain-source capacitance effect; impedance transformation networks; insertion loss; millimeter-wave frequency range; off-state isolation; resonant-type switch design method; single pole double throw switch; FETs; Frequency; Gallium arsenide; HEMTs; Impedance; MMICs; PHEMTs; Process design; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966882

Filename

966882