DocumentCode :
1919884
Title :
P1–32: Calculation of the enhancement factor for a high-aspect ratio structure
Author :
Filip, Lucian D. ; Carey, David J. ; Silva, Ravi
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear :
2010
fDate :
26-30 July 2010
Firstpage :
86
Lastpage :
87
Abstract :
The field enhancement factor for a cylindrically symmetric structure is obtained using an electrostatic model based on a self-validating algorithm. The correct 0 V equipotential line is calculated such that it matches the surface of the given structure.
Keywords :
carbon nanotubes; field emission; surface structure; C; carbon nanotube; cylindrically symmetric structure; electrostatic model; equipotential line; field enhancement factor; high-aspect ratio structure; self-validating algorithm; surface structure; voltage 0 V; Cathodes; Electric fields; Electric potential; Electrostatics; Physics; Rough surfaces; Surface roughness; carbon nanotube; field enhancement; self-validation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
Type :
conf
DOI :
10.1109/IVNC.2010.5563164
Filename :
5563164
Link To Document :
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