A Comparative Study of Surface and Buried P-Channel 0.10um MOSFETs

Author

Guegan, G. ; Deleonibus, S. ; Bertrand, G. ; Souil, D. ; Clerc, R. ; Tedesco, S. ; Heitzmann, M. ; Mur, P.

Author_Institution

LPCS/ENSERG, Grenoble, France

fYear

2000

fDate

11-13 September 2000

Firstpage

544

Lastpage

547

Keywords

Boron; Doping; Geometry; Ion implantation; Leakage current; Lithography; MOSFETs; Oxidation; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194835

Filename

1503765

Link To Document