Title :
Monte Carlo Simulation of Nonstationary Electron Transport in GaAs/AlAs Quantum Wire
Author :
Borzdov, A.V. ; Pozdnyakov, D.V. ; Borzdov, V.M.
Author_Institution :
Belarus State Univ., Minsk
Abstract :
The results of Monte Carlo simulation of electron drift velocity response on the application of longitudinal electric field in transistor structure based on GaAs/AIAs quantum wire are presented. All the dominant electron scattering mechanisms in the structure considered have been taken into account, as wellas collisional broadening. The influence of transverse electric field on electron drift velocity is investigated.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor quantum wires; Monte Carlo simulation; collisional broadening; electron drift velocity; electron scattering mechanisms; longitudinal electric field; nonstationary electron transport; semiconductor quantum wire; transistor structure; transverse electric field; Electron mobility; Gallium arsenide; Kinetic energy; Scattering;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368866
