DocumentCode :
1920047
Title :
Calculation of Electron Drift Velocity in Undoped GaAs Nanowires
Author :
Pozdnyakov, D.V. ; Borzdov, A.V. ; Borzdov, V.M.
Author_Institution :
Belarus State Univ., Minsk
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
598
Lastpage :
600
Abstract :
CALCULATION OF ELECTRON DRIFT VELOCITY IN UNDOPED GaAs NANOWIRES Dependencies of electron drift velocity in thin un-doped GaAs-in-AI203 nanowires on time have been calculated by solving of the Boltzmann kinetic equation. Both Pauli principle and the real GaAs band structure deviation from the parabolic approximation of the latter have been taken into consideration. Moreover, band structure distortion caused by the scattering processes of charge carriers is taken into account at the approximation of stable one-particle electron states.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; nanowires; velocity measurement; Boltzmann kinetic equation; Pauli principle; band structure distortion; electron drift velocity calculation; nanowires; one particle electron states; parabolic approximation; Electron mobility; Gallium arsenide; Nanowires; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
Type :
conf
DOI :
10.1109/CRMICO.2007.4368867
Filename :
4368867
Link To Document :
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