DocumentCode
1920047
Title
Calculation of Electron Drift Velocity in Undoped GaAs Nanowires
Author
Pozdnyakov, D.V. ; Borzdov, A.V. ; Borzdov, V.M.
Author_Institution
Belarus State Univ., Minsk
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
598
Lastpage
600
Abstract
CALCULATION OF ELECTRON DRIFT VELOCITY IN UNDOPED GaAs NANOWIRES Dependencies of electron drift velocity in thin un-doped GaAs-in-AI203 nanowires on time have been calculated by solving of the Boltzmann kinetic equation. Both Pauli principle and the real GaAs band structure deviation from the parabolic approximation of the latter have been taken into consideration. Moreover, band structure distortion caused by the scattering processes of charge carriers is taken into account at the approximation of stable one-particle electron states.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; nanowires; velocity measurement; Boltzmann kinetic equation; Pauli principle; band structure distortion; electron drift velocity calculation; nanowires; one particle electron states; parabolic approximation; Electron mobility; Gallium arsenide; Nanowires; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location
Crimea
Print_ISBN
978-966-335-012-7
Type
conf
DOI
10.1109/CRMICO.2007.4368867
Filename
4368867
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