• DocumentCode
    1920047
  • Title

    Calculation of Electron Drift Velocity in Undoped GaAs Nanowires

  • Author

    Pozdnyakov, D.V. ; Borzdov, A.V. ; Borzdov, V.M.

  • Author_Institution
    Belarus State Univ., Minsk
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    598
  • Lastpage
    600
  • Abstract
    CALCULATION OF ELECTRON DRIFT VELOCITY IN UNDOPED GaAs NANOWIRES Dependencies of electron drift velocity in thin un-doped GaAs-in-AI203 nanowires on time have been calculated by solving of the Boltzmann kinetic equation. Both Pauli principle and the real GaAs band structure deviation from the parabolic approximation of the latter have been taken into consideration. Moreover, band structure distortion caused by the scattering processes of charge carriers is taken into account at the approximation of stable one-particle electron states.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; nanowires; velocity measurement; Boltzmann kinetic equation; Pauli principle; band structure distortion; electron drift velocity calculation; nanowires; one particle electron states; parabolic approximation; Electron mobility; Gallium arsenide; Nanowires; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368867
  • Filename
    4368867