Title :
A wide dynamic range switched-LNA in SiGe BiCMOS
Author :
Nakatani, T. ; Itoh, J. ; Imanishi, I. ; Ishikawa, O.
Author_Institution :
Device Eng. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
A wide dynamic range, high current efficient switched-LNA has been developed by using SiGe BiCMOS technology. The low loss RF MOSFET reduced silicon substrate effect at high frequency is used as a bypass switch for the LNA. The 800-900 MHz LNA is demonstrated in this work. In high gain/low distortion mode for transmitting and receiving simultaneously, the amplifier achieves 15.3 dB gain, 1.4 dB noise figure and +1.6 dBm IIP3 with 5.9 mA DC current. In high gain/low current mode for receiving only, 13.3 dB gain, 1.6 dB noise figure and -0.6 dBm IIP3 are achieved with 3.0 mA. In low gain mode, 1.5 dB insertion loss and +16.1 dBm IIP3 with <10 /spl mu/A are realized by the bypass switch. The switched-LNA is housed in a very small and low cost SON12 plastic package with a down-mixer.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; integrated circuit design; integrated circuit noise; semiconductor materials; switched networks; 1.4 to 1.6 dB; 1.5 dB; 13.3 to 15.3 dB; 3 to 5.9 mA; 800 to 900 MHz; RF MOSFET switch; SON12 plastic package; Si; SiGe; SiGe BiCMOS technology; bypass switch; high current efficient LNA; high gain/low current mode; high gain/low distortion mode; low gain mode; low loss RF MOSFET reduced Si substrate effect; low-noise amplifier; switched-LNA; wide dynamic range; BiCMOS integrated circuits; Dynamic range; Gain; Germanium silicon alloys; Low-noise amplifiers; MOSFET circuits; Noise figure; Radio frequency; Silicon germanium; Switches;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966888
