Title :
Electroluminescence and Gate Current Generated by Impact Ionization in 0.1μm GAtelength Hemts on GaAs
Author :
Aniel, F. ; Boucaud, P. ; Sylvestre, A. ; Crozat, P. ; Julien, F.H. ; Adde, R. ; Jin, Y.
Author_Institution :
IEF, URA22 CNRS, Bat 220, Université Paris-Sud, 91405, Orsay, France
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
