Electroluminescence and Gate Current Generated by Impact Ionization in 0.1μm GAtelength Hemts on GaAs

Author

Aniel, F. ; Boucaud, P. ; Sylvestre, A. ; Crozat, P. ; Julien, F.H. ; Adde, R. ; Jin, Y.

Author_Institution

IEF, URA22 CNRS, Bat 220, UniversitÃ© Paris-Sud, 91405, Orsay, France

fYear

1994

fDate

11-15 Sept. 1994

Firstpage

543

Lastpage

546

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1994. ESSDERC '94. 24th European

Conference_Location

Edinburgh, Scotland

Print_ISBN

0863321579

Type

Filename

5435776

Link To Document